HUF75339P3
Manufacturer:
On Semiconductor
Mfr.Part #:
HUF75339P3
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 200 W 55 V Continuous Drain Current (ID):75 A 130 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 55 V |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 12 mΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 75 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 200 W |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 2 nF |
| Continuous Drain Current (ID) | 75 A |
| Rds On Max | 12 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 60 ns |
| Gate Charge | 130 nC |
| Drain to Source Resistance | 12 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
Stock: 166
Distributors
pcbx
pcbxUnit Price$1.86647
Ext.Price$1.86647
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.86647 | $1.86647 |
| 10 | $1.47461 | $14.74610 |
| 25 | $1.16502 | $29.12550 |
| 50 | $0.92043 | $46.02150 |
| 100 | $0.82861 | $82.86100 |
| 300 | $0.74376 | $223.12800 |
| 500 | $0.66760 | $333.80000 |
| 1000 | $0.61585 | $615.85000 |
| 3000 | $0.58280 | $1748.40000 |
| 5000 | $0.55152 | $2757.60000 |